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Monday, September 11, 2006

Samsung announces 40 nm Flash, predicts 20 nm devices

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There's still room left for NAND Flash to scale. According to Samsung, the technology may shrink into 20 nm structures, down from the common 70 and 60 nm today. Samsung also presented the memory it will position to replace NOR Flash: Phase-change Random Access Memory (PRAM) promises a 30x increases in speed and 10 times the life span of flash.

Video iPod banner for September 12th?
Last time we saw a banner shown at an Apple event was, well, last month for the WWDC 2006 extravaganza.

posted by ipod_440312 at 9/11/2006 02:00:07 AM

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